8×8 flipchip assembled InGaAs detector arrays for optical interconnectMOSELEY, A. J; KEARLEY, M. Q; MORRIS, R. C et al.Electronics Letters. 1991, Vol 27, Num 17, pp 1566-1567, issn 0013-5194Article

Low voltage InGaAs/InP multiple quantum well reflective Fabry-Perot modulatorMOSELEY, A. J; THOMPSON, J; KEARLEY, M. Q et al.Electronics Letters. 1990, Vol 26, Num 13, pp 913-915, issn 0013-5194, 3 p.Article

Uniform 8 × 8 array InGaAs/InP multiquantum well asymmetric Fabry-Perot modulators for flipchip solder bond hybrid optical interconnectMOSELEY, A. J; KEARLEY, M. Q; MORRIS, R. C et al.Electronics Letters. 1992, Vol 28, Num 1, pp 12-14, issn 0013-5194Article

Quantum confined Stark effect in InGaAs/InP single quantum wells investigated by photocurrent spectroscopyMOSELEY, A. J; ROBBINS, D. J; MARSHALL, A. C et al.Semiconductor science and technology. 1989, Vol 4, Num 3, pp 184-190, issn 0268-1242, 7 p.Article

Passively aligned four-channel reflective InP MQW modulator transmitterDUTHIE, P. J; MOSELEY, A. J; KEARLEY, M. Q et al.Electronics Letters. 1995, Vol 31, Num 14, pp 1177-1179, issn 0013-5194Article

8 channel InGaAs/InP quantum well asymmetric Fabry-Perot modulator hybridised with foundry VLSI silicon CMOS drive circuitsMOSELEY, A. J; KEARLEY, M. Q; GOODWIN, M. J et al.Electronics Letters. 1992, Vol 28, Num 17, pp 1658-1660, issn 0013-5194Article

Optical receiver array in silicon bipolar technology with selfaligned, low parasitic III/V detectors for DC-1 Gbit/s parallel linksWIELAND, J; MELCHIOR, H; KEARLEY, M. Q et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2211-2213, issn 0013-5194Article

Low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulators for optical communications at microwave frequenciesKIRKBY, C. J. G; GOODWIN, M. J; MOSELEY, A. J et al.IEE proceedings. Part J. Optoelectronics. 1992, Vol 139, Num 4, pp 249-253, issn 0267-3932Article

Optoelectronic component arrays for optical interconnection of circuits and subsystemsGOODWIN, M. J; MOSELEY, A. J; KEARLEY, M. Q et al.Journal of lightwave technology. 1991, Vol 9, Num 12, pp 1639-1645, issn 0733-8724Article

The use of Inp-P-based semiconductor reflective stacks for enhanced device performanceTHOMPSON, J; WOOD, A. K; MOSELEY, A. J et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 860-866, issn 0022-0248Conference Paper

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPEWOOD, A. K; THOMPSON, J; CARR, N et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 132-138, issn 0022-0248Conference Paper

OEIC WDM transceiver modules for local access networksFOSTER, G. M; RAWSTHORNE, J. R; HALL, J. P et al.Electronics Letters. 1995, Vol 31, Num 2, pp 132-133, issn 0013-5194Article

Quantum confined stark effect in GaInAs/InP single quantum wells grown by low pressure MOCPEMOSELEY, A. J; ROBBINS, D. J; MARSHALL, A. C et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1301-1302, issn 0013-5194Article